4-119 up to 6 ghz low noise silicon bipolar transistor technical data features ? low noise figure: 1.6 db typical at 2.0 ghz 3.0 db typical at 4.0 ghz ? high associated gain: 14.5 db typical at 2.0 ghz 10.5 db typical at 4.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? hermetic, gold-ceramic microstrip package AT-41470 70 mil package description hewlett-packards AT-41470 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the AT-41470 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w at 1 ghz , makes this device easy to use as a low noise amplifier. the AT-41470 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8927e
4-120 AT-41470 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2,3] mw 500 t j junction temperature c 200 t stg storage temperature c -65 to 200 thermal resistance [2,4] : q jc = 175 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.7 mw/ c for t c > 113 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 12.0 f = 4.0 ghz 6.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 19.0 v ce = 8 v, i c = 25 ma f = 4.0 ghz 18.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 15.0 f = 4.0 ghz 10.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.3 f = 2.0 ghz 1.6 1.9 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 18.5 f = 2.0 ghz 13.0 14.5 f = 4.0 ghz 10.5 f t gain bandwidth product: v ce = 8 v, i c = 25 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 300 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.2 note: 1. for this test, the emitter is grounded.
4-121 AT-41470 typical performance, t a = 25 c frequency (ghz) figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) i c (ma) figure 3. optimum noise figure and associated gain vs. collector current and collector voltage. f = 2.0 ghz. gain (db) 0 1020 3040 frequency (ghz) figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 25 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 24 21 18 15 12 9 6 3 0 8 6 4 2 0 nf (db) 4 3 2 1 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 16 15 14 13 12 g a nf o nf 50 i c (ma) figure 6. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 3040 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 1.0 ghz 10 v 4 v g a nf o 6 v 10 v 4 v 6 v i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 3040 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz figure 4. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v. i c (ma) gain (db) 0 1020 3040 6 4 2 0 nf o (db) 16 14 12 10 8 g a nf o 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz
4-122 AT-41470 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .79 -37 28.4 26.27 157 -39.2 .011 57 .94 -13 0.5 .65 -120 22.3 13.05 110 -30.8 .029 40 .62 -30 1.0 .61 -155 17.1 7.17 88 -28.9 .036 41 .52 -32 1.5 .60 -172 13.9 4.93 76 -27.5 .042 46 .50 -36 2.0 .60 176 11.5 3.75 65 -26.4 .048 46 .50 -40 2.5 .61 169 9.7 3.06 59 -26.0 .050 58 .48 -41 3.0 .62 161 8.3 2.59 51 -24.7 .058 61 .49 -48 3.5 .61 154 7.0 2.24 42 -23.2 .069 63 .51 -56 4.0 .60 146 5.9 1.97 32 -21.4 .085 62 .52 -63 4.5 .60 137 4.9 1.77 24 -20.1 .099 59 .55 -69 5.0 .60 127 4.1 1.61 15 -19.5 .106 59 .57 -75 5.5 .61 115 3.4 1.47 6 -18.3 .121 56 .58 -80 6.0 .64 104 2.6 1.34 -4 -17.4 .135 53 .57 -87 AT-41470 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .64 -62 32.5 42.11 147 -40.9 .009 75 .85 -19 0.5 .61 -146 23.7 15.31 100 -34.4 .019 47 .50 -30 1.0 .61 -170 18.1 8.00 83 -30.2 .031 53 .44 -31 1.5 .60 177 14.7 5.42 72 -29.1 .035 62 .44 -34 2.0 .61 167 12.3 4.10 62 -27.1 .044 60 .44 -39 2.5 .61 163 10.4 3.32 58 -25.7 .052 67 .43 -39 3.0 .62 156 9.0 2.81 50 -23.6 .066 67 .44 -46 3.5 .62 150 7.7 2.44 41 -22.6 .074 67 .46 -55 4.0 .62 142 6.6 2.13 32 -21.7 .082 63 .48 -62 4.5 .61 134 5.6 1.91 24 -20.1 .099 62 .50 -68 5.0 .60 123 4.8 1.73 15 -18.9 .113 59 .52 -73 5.5 .61 112 4.0 1.59 6 -18.1 .124 54 .54 -78 6.0 .64 102 3.2 1.45 -3 -17.3 .136 50 .53 -85 a model for this device is available in the device models section. AT-41470 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.2 .12 5 0.17 0.5 1.2 .11 17 0.17 1.0 1.3 .06 35 0.17 2.0 1.6 .21 160 0.16 4.0 3.0 .45 -150 0.20
4-123 70 mil package dimensions 1 3 4 2 emitter emitter collector base .020 .508 .070 1.70 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05 package marking is 414
|
